Reduced Metal Contamination in Atomic-Layer-Deposited HfO2 Films Grown on Si Using O3 Oxidant Generated Without N2 Assistance

The physicochemical and electrical properties of atomic-layer-deposited HfO 2 films grown using 0 3 generated with and without N 2 assistance were examined. Compared to the films grown using conventionally generated 0 3 with N 2 assistance, the HfO 2 film grown using O 3 generated without N 2 assistance had less metal impurities (mainly Cr) possibly due to the etching of stainless ozone delivery line. This induced a higher physical density of the film and a lower Si concentration in the film, which resulted in enhanced dielectric properties and reliability such as dielectric breakdown and resistance to constant voltage stress.

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