论文信息 - Failure mechanism and SPICE modeling of HBT long-term current instability

Failure mechanism and SPICE modeling of HBT long-term current instability

Abstract The long-term current instability of AlGaAs GaAs heterojunction bipolar transistor (HBT) is studied, and the physical mechanism contributing to such a behavior is investigated. Based on this, a model capable of predicting the HBT long-term current drift and mean time to failure (MTTF) is developed. In addition, such a model is implemented into SPICE circuit simulator, thus allowing the simulation of HBT circuits subjected to an electrical and thermal stress condition.

Juin J. Liou | S. H. Sheu

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