论文信息 - N-face GaN/AlN/GaN/InAlN and GaN/AlN/AlGaN/GaN/InAlN high-electron-mobility transistor structures grown by plasma-assisted molecular beam epitaxy on vicinal substrates - 字舞流文

N-face GaN/AlN/GaN/InAlN and GaN/AlN/AlGaN/GaN/InAlN high-electron-mobility transistor structures grown by plasma-assisted molecular beam epitaxy on vicinal substrates

U. Mishra | J. Speck | S. Keller | E. Ahmadi | Feng Wu | S. Kaun | K. Hestroffer | Haoran Li | Maher B. Tahhan