Controlling the relaxation mechanism of low strain Si1−xGex/Si(001) layers and reducing the threading dislocation density by providing a preexisting dislocation source
暂无分享,去创建一个
G. Capellini | L. Gaspare | L. Di Gaspare | T. Schroeder | A. Marzegalli | P. Storck | M. Albrecht | F. Montalenti | M. Zoellner | M. De Seta | T. Schulz | F. Rovaris | L. Becker | G. Schwalb | M. Seta | T. Schroeder | M. Albrecht