Effect of gate length on breakdown voltage in AlGaN/GaN high-electron-mobility transistor
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Y. Hao | Xiao-hua Ma | Jincheng Zhang | Shenglei Zhao | Minhan Mi | Bin Hou | Jun Luo | Wei-Wei Chen
暂无分享,去创建一个
Y. Hao | Xiao-hua Ma | Jincheng Zhang | Shenglei Zhao | Minhan Mi | Bin Hou | Jun Luo | Wei-Wei Chen