论文信息 - Experimental study on carrier transport mechanism in ultrathin-body SOI MOSFETs

Experimental study on carrier transport mechanism in ultrathin-body SOI MOSFETs

The electrical characteristics of ultrathin-body SOI CMOSFETs are intensively investigated. It is demonstrated that electron mobility increases as SOI thickness decreases, when SOI thickness, T/sub SOI/, is in the range from 3.5 nm to 4.5 nm. On the other hand, hole mobility decreases monotonically as T/sub SOI/ decreases. In addition, it is demonstrated that, when SOI thickness is thinner than 4 nm, slight (even atomic-level) SOI thickness fluctuations have a significant impact on threshold voltage, gate-channel capacitance, and carrier mobility of ultrathin-body CMOSFETs.

J. Koga | S. Takagi | K. Uchida | A. Kinoshita | H. Watanabe

[1] Gold. Electronic transport properties of a two-dimensional electron gas in a silicon quantum-well structure at low temperature. , 1987, Physical review. B, Condensed matter.

[2] S. Horiguchi,et al. ELECTRONIC STRUCTURES AND PHONON-LIMITED ELECTRON MOBILITY OF DOUBLE-GATE SILICON-ON-INSULATOR SI INVERSION LAYERS , 1999 .

[3] G. G. Stokes. "J." , 1890, The New Yale Book of Quotations.

[4] S. Takagi,et al. Influences of buried-oxide interface on inversion-layer mobility in ultra-thin SOI MOSFETs , 2002 .

[5] T. Numata,et al. Experimental study on carrier transport mechanism in ultrathin-body SOI nand p-MOSFETs with SOI thickness less than 5 nm , 2002, Digest. International Electron Devices Meeting,.

[6] S. Horiguchi,et al. Quantum-mechanical effects on the threshold voltage of ultrathin-SOI nMOSFETs , 1993, IEEE Electron Device Letters.

[7] L. Selmi,et al. Study of low field electron transport in ultra-thin single and double-gate SOI MOSFETs , 2002, Digest. International Electron Devices Meeting,.

[8] Sorin Cristoloveanu,et al. Investigation of SOI MOSFETs with ultimate thickness , 1999 .

[9] Andrew G. Glen,et al. APPL , 2001 .

[10] A. Toriumi,et al. Subband structure engineering for performance enhancement of Si MOSFETs , 1997, International Electron Devices Meeting. IEDM Technical Digest.