Plastic Deformation of Micromachined Silicon Diaphragms with a Sealed Cavity at High Temperatures

Single crystal silicon (SCS) diaphragms are widely used as pressure sensitive elements in micromachined pressure sensors. However, for harsh environments applications, pure silicon diaphragms are hardly used because of the deterioration of SCS in both electrical and mechanical properties. To survive at the elevated temperature, the silicon structures must work in combination with other advanced materials, such as silicon carbide (SiC) or silicon on insulator (SOI), for improved performance and reduced cost. Hence, in order to extend the operating temperatures of existing SCS microstructures, this work investigates the mechanical behavior of pressurized SCS diaphragms at high temperatures. A model was developed to predict the plastic deformation of SCS diaphragms and was verified by the experiments. The evolution of the deformation was obtained by studying the surface profiles at different anneal stages. The slow continuous deformation was considered as creep for the diaphragms with a radius of 2.5 mm at 600 °C. The occurrence of plastic deformation was successfully predicted by the model and was observed at the operating temperature of 800 °C and 900 °C, respectively.

[1]  A. Fink,et al.  High temperature high accuracy piezoresistive pressure sensor based on smart-cut soi , 2008, 2008 IEEE 21st International Conference on Micro Electro Mechanical Systems.

[2]  S. Orain,et al.  A constitutive single crystal model for the silicon mechanical behavior: applications to the stress induced by silicided lines and STI in MOS technologies , 2005, EuroSimE 2005. Proceedings of the 6th International Conference on Thermal, Mechanial and Multi-Physics Simulation and Experiments in Micro-Electronics and Micro-Systems, 2005..

[3]  Jiangang Du,et al.  High-temperature single-crystal 3C-SiC capacitive pressure sensor , 2004, IEEE Sensors Journal.

[4]  Yoshitada Isono,et al.  Plastic deformation of nanometric single crystal silicon wire in AFM bending test at intermediate temperatures , 2002 .

[5]  C. Kim,et al.  Microscale material testing of single crystalline silicon: process effects on surface morphology and tensile strength , 2000 .

[6]  S. M. Spearing,et al.  On the flexural creep of single-crystal silicon , 2000 .

[7]  M. Schmidt,et al.  Microfabrication of high-temperature silicon devices using wafer bonding and deep reactive ion etching , 1999 .

[8]  Koji Sumino,et al.  Deformation behavior of silicon , 1999 .

[9]  J. Frühauf,et al.  New aspects of the plastic deformation of silicon – prerequisites for the reshaping of silicon microelements , 1999 .

[10]  M. Mehregany,et al.  Silicon carbide MEMS for harsh environments , 1998, Proc. IEEE.

[11]  A. A. Ned,et al.  6H-SiC pressure sensor operation at 600/spl deg/C , 1998, 1998 Fourth International High Temperature Electronics Conference. HITEC (Cat. No.98EX145).

[12]  J. M. Noworolski,et al.  Silicon fusion bonding and deep reactive ion etching: a new technology for microstructures , 1996 .

[13]  Mikio Bessho,et al.  SOI Type Pressure Sensor for High Temperature Pressure Measurement , 1994 .

[14]  M. Schmidt,et al.  Design of sealed cavity microstructures formed by silicon wafer bonding , 1993 .

[15]  P. Hirsch,et al.  THE BRITTLE-DUCTILE TRANSITION IN SILICON , 1991 .

[16]  Deepak Uttamchandani,et al.  Measurement of Young's modulus and internal stress in silicon microresonators using a resonant frequency technique , 1990 .

[17]  S. G. Roberts,et al.  The brittle–ductile transition in silicon. I. Experiments , 1989, Proceedings of the Royal Society of London. A. Mathematical and Physical Sciences.

[18]  J. Greenwood Silicon in mechanical sensors , 1988 .

[19]  Masataka Umeno,et al.  Mechanical Properties of Heat-treated CZ–Si Wafers from Brittle to Ductile Temperature Range , 1982 .

[20]  P. Haasen,et al.  Kriechen von Silizium-Einkristallen , 1964 .

[21]  J. Patel,et al.  Macroscopic Plastic Properties of Dislocation‐Free Germanium and Other Semiconductor Crystals. I. Yield Behavior , 1963 .

[22]  G. L. Pearson,et al.  Deformation and fracture of small silicon crystals , 1957 .

[23]  Chien-Hung Wu,et al.  Fabrication and Testing of Single Crystalline 3C-SiC Piezoresistive Pressure Sensors , 2001 .

[24]  S. M. Spearing,et al.  Materials issues in microelectromechanical systems (MEMS) , 2000 .

[25]  P. Haasen,et al.  The Brittle-Ductile Transition of Silicon , 1987 .

[26]  M. Paterson,et al.  Brittle-Ductile Transition , 1978 .

[27]  C. R. Barrett,et al.  Creep and recovery of silicon single crystals , 1972 .

[28]  M. Myshlyaev,et al.  Dislocation Structure and Macroscopic Characteristics of Plastic Deformation at Creep of Silicon Crystals , 1969 .

[29]  J. Wortman,et al.  Young's Modulus, Shear Modulus, and Poisson's Ratio in Silicon and Germanium , 1965 .