Evidence of detrimental surface effects on GaAs power MESFETs

GaAs power FETs submitted to biased life tests show a gradual degradation resulting in an output power loss and changes on DC characteristics such as gate-to-drain breakdown voltage and gate leakage current. It is shown that this degradation is correlated with surface effects.

[1]  Eliot D. Cohen,et al.  Reliability of Gold Metallized Commercially Available Power GaAs FETs , 1979, 17th International Reliability Physics Symposium.

[2]  P.M. White,et al.  Reliability Investigations of GaAs Power FETs with Aluminium Gate Metallisation , 1978, 1978 8th European Microwave Conference.

[3]  R. Yamamoto,et al.  Light emission and burnout characteristics of GaAs power MESFET's , 1978, IEEE Transactions on Electron Devices.

[4]  H. Fukui,et al.  Long-term and instantaneous burnout in GaAs power FET's: Mechanisms and solutions , 1981, IEEE Transactions on Electron Devices.

[5]  Ira Drukier,et al.  On the Reliability of Power GaAs FETs , 1979, 17th International Reliability Physics Symposium.

[6]  H. Fukui,et al.  Reliability of power GaAs field-effect transistors , 1979, 1979 International Electron Devices Meeting.