Multiband RF-interconnect for reconfigurable network-on-chip communications

One of the key benefits of the scaling of CMOS is that the switching speed of the transistor improves over each technology generation. According to ITRS, fT and fmax, will be 600GHz and 1 THz, respectively, in 16nm CMOS technology. With the advance in CMOS mm-wave circuits, hundreds of GHz bandwidth will be available in the near future. In addition, compared with CMOS repeaters charging and discharging the wire, EM waves travel in a guided medium at the speed of light which is about 10ps/mm on silicon substrate. The question here is: How can we utilize over hundreds of GHz of bandwidth in a future mobile system through RF-I while concurrently achieving ultra-low power operation and dynamic allocation in bandwidth to meet future Network-on-Chip needs?

[1]  Jason Cong,et al.  Power reduction of CMP communication networks via RF-interconnects , 2008, 2008 41st IEEE/ACM International Symposium on Microarchitecture.

[2]  Vwani P. Roychowdhury,et al.  RF/wireless interconnect for inter- and intra-chip communications , 2001, Proc. IEEE.

[3]  Mau-Chung Frank Chang,et al.  A simultaneous tri-band on-chip RF-interconnect for future network-on-chip , 2009, 2009 Symposium on VLSI Circuits.

[4]  R. Engelbrecht,et al.  DIGEST of TECHNICAL PAPERS , 1959 .

[5]  Jason Cong,et al.  CMP network-on-chip overlaid with multi-band RF-interconnect , 2008, 2008 IEEE 14th International Symposium on High Performance Computer Architecture.

[6]  Jason Cong,et al.  MC-Sim: an efficient simulation tool for MPSoC designs , 2008, ICCAD 2008.

[7]  Zhiwei Xu,et al.  An RF/baseband FDMA-interconnect transceiver for reconfigurable multiple access chip-to-chip communication , 2005, ISSCC. 2005 IEEE International Digest of Technical Papers. Solid-State Circuits Conference, 2005..