Low Voltage Program/Erase Characteristics of Si Nanocrystal Memory with Damascene Gate FinFET on Bulk Si Wafer

We propose a damascene gate FinFET with Si nanocrystals implemented on bulk silicon wafer for low voltage flash memory device. The use of optimized SRON (Silicon-Rich Oxynitride) process allows a high degree of control of the Si excess in the oxide. The FinFET with Si nanocrystals shows high program/erase (P/E) speed, large V TH shifts over 2.5V at 12V/10㎲ for program and -12V/1㎳ for erase, good retention time, and acceptable endurance characteristics. Si nanocrystal memory with damascene gate FinFET is a solution of gate stack and voltage scaling for future generations of flash memory device.

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