Electro-thermal instability in multi-cellular Trench-IGBTs in avalanche condition: Experiments and simulations

This paper reports on the results of a study on electro-thermal instability induced in multi-cellular Trench-IGBTs in avalanche condition. Experimental measurements, made on T-IGBTs, show possible inhomogeneous current distribution under Unclamped Inductive Switching (UIS) confirmed by transient infrared thermography measurements. Together with this, an analytical modeling of avalanche behavior has been included in a compact electro-thermal simulator to study the interaction between a large numbers of elementary cells of T-IGBTs forced in avalanche condition. Electro-thermal simulations qualitatively replicate the possible inhomogeneous operation observed experimentally. Finally a possible theoretical interpretation of the instability in avalanche condition for T-IGBT is given.

[1]  Paolo Spirito.  An analytical expression for the multiplication factor M in semiconductors with equal ionization coefficients , 1972 .

[2]  Andrea Irace,et al.  New developments of THERMOS3, a tool for 3D electro-thermal simulation of smart power MOSFETs , 2007, Microelectron. Reliab..

[3]  Allen R. Hefner,et al.  A dynamic electro-thermal model for the IGBT , 1992, Conference Record of the 1992 IEEE Industry Applications Society Annual Meeting.

[4]  A.R. Hefner,et al.  Analytical modeling of device-circuit interactions for the power insulated gate bipolar transistor (IGBT) , 1988, Conference Record of the 1988 IEEE Industry Applications Society Annual Meeting.

[5]  A. Irace,et al.  Compact electro-thermal modeling and simulation of large area multicellular Trench-IGBT , 2010, 2010 27th International Conference on Microelectronics Proceedings.

[6]  A Irace,et al.  An equivalent time temperature mapping system with a 320 x 256 pixels full-frame 100 kHz sampling rate. , 2007, The Review of scientific instruments.

[7]  Katsuhiko Nishiwaki,et al.  Investigations of inhomogeneous operation of IGB under Unclamped Inductive Switching condition , 2010, 2010 22nd International Symposium on Power Semiconductor Devices & IC's (ISPSD).

[8]  J.B. Bernstein,et al.  Failure dynamics of the IGBT during turn-off for unclamped inductive loading conditions , 1998, Conference Record of 1998 IEEE Industry Applications Conference. Thirty-Third IAS Annual Meeting (Cat. No.98CH36242).