论文信息 - A high-speed POF receiver with 1 mm integrated photodiode in 180 nm CMOS

A high-speed POF receiver with 1 mm integrated photodiode in 180 nm CMOS

The design and measurement of an optical receiver is presented. To minimize cost, it is completely integrated on silicon in a CMOS process. In spite of the large parasitic photodiode capacitance, transient measurements are shown up to 800 Mbit/s.

Michiel Steyaert | Filip Tavernier

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