Electric readout of magnetization dynamics in a ferromagnet-semiconductor system

We apply an analysis of time-dependent spin-polarized current in a semiconductor channel at room temperature to establish how the magnetization configuration and dynamics of three ferromagnetic terminals, two of them biased and third connected to a capacitor, affect the currents and voltages. In a steady state, the voltage on the capacitor is related to spin accumulation in the channel. When the magnetization of one of the terminals is rotated, a transient current is triggered. This effect can be used for electrical detection of magnetization reversal dynamics of an electrode or for dynamical readout of the alignment of two magnetic contacts.

[1]  Yi Ji,et al.  Enhanced spin injection polarization in Co/Cu/Co nonlocal lateral spin valves , 2006 .

[2]  H. Dery,et al.  Lateral diffusive spin transport in layered structures , 2005, cond-mat/0510770.

[3]  Hanan Dery,et al.  Spin transference and magnetoresistance amplification in a transistor , 2006 .

[4]  C. Adelmann,et al.  Imaging Spin Transport in Lateral Ferromagnet/Semiconductor Structures , 2005, Science.

[5]  C. Adelmann,et al.  Spin injection and relaxation in ferromagnet-semiconductor heterostructures , 2004, cond-mat/0409103.

[6]  I. Žutić,et al.  Spin-polarized current amplification and spin injection in magnetic bipolar transistors , 2003, cond-mat/0311456.

[7]  Michael E. Flatté,et al.  Theory of semiconductor magnetic bipolar transistors , 2003 .

[8]  B. Jonker,et al.  Analysis of the transport process providing spin injection through an Fe/AlGaAs Schottky barrier , 2003, cond-mat/0302221.

[9]  J. Schliemann,et al.  Nonballistic spin-field-effect transistor. , 2002, Physical review letters.

[10]  M. Flatté,et al.  Spin diffusion and injection in semiconductor structures: Electric field effects , 2002, cond-mat/0206321.

[11]  C. Ciuti,et al.  Spin-dependent properties of a two-dimensional electron gas with ferromagnetic gates , 2002, cond-mat/0205651.

[12]  E. Rashba.  Complex impedance of a spin injecting junction , 2002, cond-mat/0202222.

[13]  P. Levy,et al.  Time dependence of spin accumulation and magnetoresistance in magnetic multilayers , 2002 .

[14]  B. Jonker,et al.  Efficient electrical spin injection from a magnetic metal/tunnel barrier contact into a semiconductor , 2001, cond-mat/0110059.

[15]  B. V. van Wees,et al.  Electrical spin injection and accumulation at room temperature in an all-metal mesoscopic spin valve , 2001, Nature.

[16]  E. Rashba.  Theory of electrical spin injection: Tunnel contacts as a solution of the conductivity mismatch problem , 2000, cond-mat/0010473.

[17]  Saied N. Tehrani,et al.  Recent developments in magnetic tunnel junction MRAM , 2000 .

[18]  Nazarov,et al.  Finite-element theory of transport in ferromagnet-normal metal systems , 1999, Physical review letters.

[19]  H. Zhao,et al.  Charge and spin transport through a metallic ferromagnetic-paramagnetic-ferromagnetic junction , 1997 .

[20]  M. Johnson,et al.  Bipolar Spin Switch , 1993, Science.

[21]  S. Datta,et al.  Electronic analog of the electro‐optic modulator , 1990 .

[22]  K. Lynn,et al.  Slow positrons in metal single crystals. I. Positronium formation at Ag(100), Ag(111), and Cu(111) surfaces , 1980 .