Memory device and operating method thereof

The techniques of the memory blocks including a plurality of memory cells; The peripheral circuit configured to perform a program operation of the memory cells; And during the program operation, a verify operation is omitted, and in selected blind program section is applied to the program voltage to a word line, is set to the selected word line in a non-voltage default (default) to the selected word line than the lower than the first pass voltage the device includes a memory and its method of operation, including control logic that controls the peripheral circuit to selectively applying a second pass voltage.