论文信息 - A multi-gate single-electron transistor and its application to an exclusive-OR gate

A multi-gate single-electron transistor and its application to an exclusive-OR gate

The two-input exclusive-OR (XOR) gate function was implemented by a multi-gate single-electron transistor. Two types of devices with different gate configurations were fabricated and tested. XOR operations were successfully performed through current switching at 40 K. The device has striking features for reducing the number of devices in logic circuits.

[1] K. Likharev. Single-electron transistors: Electrostatic analogs of the DC SQUIDS , 1987 .

[2] Moon–Young Jeong,et al. Performance of Single-Electron Transistor Logic Composed of Multi-gate Single-Electron Transistors , 1997 .

[3] Konstantin K. Likharev,et al. Single‐electron transistor logic , 1996 .

[4] John R. Tucker,et al. Complementary digital logic based on the ``Coulomb blockade'' , 1992 .

[5] Yoshihito Amemiya,et al. Single-Electron Majority Logic Circuits , 1997 .

[6] H. Namatsu,et al. Conductance oscillations of a Si single electron transistor at room temperature , 1994, Proceedings of 1994 IEEE International Electron Devices Meeting.

[7] Yasuo Takahashi,et al. Time-resolved measurement of single-electron tunneling in a Si single-electron transistor with satellite Si islands , 1995 .

[8] H. Namatsu,et al. Silicon double-island single-electron device , 1997, International Electron Devices Meeting. IEDM Technical Digest.