Demonstration of Enhanced Base Diffusion Due to Extrinsic Base Implantations in Submicron, Polysilicon-Emitter, Epitaxial Base Bipolar Transistors

In this paper, analysis of the temperature dependence of the collector current of a thin epitaxial base Si bipolar transistor is shown to provide experimental evidence of base broadening due to the enhancement of boron diffusion by defects generated alongside the emitter during extrinsic base ion implantations. This work has been carried out within the GRESSI Consortium between CEA-LETI and France Télécom-CNET. 514 S. Denorme et al Demonstration ofEnhanced Base Diffusion..