论文信息 - Sub-50-nm isolated line and trench width artifacts for CD metrology

Sub-50-nm isolated line and trench width artifacts for CD metrology

We present a technique to produce isolated lines and trenches with arbitrary widths in the range of 12 nm to 500 nm, arbitrary heights and depths in the range of 100 nm to 2 μm, 90-degree sidewall angle, and top corner radii as small as 5 nm. These structures are ideal candidates as Critical Dimension (CD) absolute standards. The sidewall angle can further be varied to create an arbitrary sidewall angle that can be accurately measured.

Luca Grella | Jerry Prochazka | Marco Tortonese | Gian Lorusso | Rene M. Blanquies

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