Crystal Growth and Photoelectrochemical Characterization of Cd4BSe6 (B = Si or Ge)

Single crystals of Cd 4 BSe 6 (B=Si, Ge) (ARGYRODITES) were grown by CVT method using a three zone furnace. As-grown crystals were of n-type and they have been characterized by photoelectrochemical (PEC) measurements in aqueous electrolytes. The current-potential curves, Mott-Schottky plots and action spectra were examined. From the analysis of spectral response measurements the band gaps (indirect) for Cd 4 SiSe 6 and Cd 4 GeSe 6 were found to be 1.68 and 1.5 eV, respectively. The opencircuit photopotentials for these semiconductor electrodes were as high as 1.1 V vs. SCE in some of the electrolytes used.

[1]  F. Lévy,et al.  Photoelectrochemical Investigation of CdSiAs2 , 1989 .

[2]  U. Stimming,et al.  Photoelectrochemical properties of ion-implanted hafnium dioxide films , 1989 .

[3]  E. Grabner,et al.  Photoelectrochemical Study on the Ternary Semiconductors AgInS2 and AgInSe2 , 1988 .

[4]  A. Bard.  Semiconductor Particles and Arrays for the Photoelectrochemical Utilization of Solar Energy , 1988 .

[5]  J. Herrero,et al.  n-Type In2S3 thin films prepared by gas chalcogenization of metallic electroplated indium: Photoelectrochemical characterization , 1988 .

[6]  F. Lévy,et al.  Photoelectronic properties of the p-type layered trichalcogenophosphates FePS3 and FePSe3 , 1988 .

[7]  A. Manivannan,et al.  Photoelectrochemical studies on p-CdCr2Se4 , 1987 .

[8]  J. Marzik,et al.  Preparation and properties of PdPSe single crystals , 1982 .

[9]  A. Heller.  Conversion of Sunlight into Electrical Power and Photoassisted Electrolysis of Water in Photoelectrochemical Cells , 1981 .

[10]  J. Turner,et al.  Photoelectrochemistry with p‐Si electrodes: Effects of inversion , 1980 .

[11]  W. Kautek,et al.  Photoelectrochemical Reactions and Formation of Inversion Layers at n‐Type MoS2‐, MoSe2‐, and WSe2‐Electrodes in Aprotic Solvents , 1980 .

[12]  A. Bard,et al.  The Concept of Fermi Level Pinning at Semiconductor/Liquid Junctions. Consequences for Energy Conversion Efficiency and Selection of Useful Solution Redox Couples in Solar Devices , 1980 .

[13]  J. Reichman.  The current‐voltage characteristics of semiconductor‐electrolyte junction photovoltaic cells , 1980 .

[14]  Wrighton.  Photoelectrochemical conversion of optical energy to electricity and fuels. Interim technical report , 1979 .

[15]  F. P. Koffyberg,et al.  Interband Transitions of Semiconducting Oxides Determined from Photoelectrolysis Spectra. , 1979 .

[16]  W. Kuhs,et al.  The argyrodites — A new family of tetrahedrally close-packed structures , 1979 .

[17]  Arthur J. Nozik,et al.  Photoelectrochemistry: Applications to Solar Energy Conversion , 1978 .

[18]  H. Reiss.  Photocharacteristics for Electrolyte‐Semiconductor Junctions , 1978 .

[19]  R. H. Wilson.  A model for the current‐voltage curve of photoexcited semiconductor electrodes , 1977 .

[20]  B. Krebs,et al.  Struktur und Eigenschaften von Cd4SiS6 Zur Kenntnis von Cd4SiSe6 , 1972 .

[21]  R. Ryan,et al.  Crystal structure of KSb2F7. Existence of the Sb2F7- ion , 1971 .

[22]  E. Kaldis,et al.  Cd4SiS6 and Cd4SiSe6, New Ternary Compounds Synthesis, Photoconductive and Fluorescent Properties , 1967 .

[23]  Wolfgang W. Gärtner,et al.  Depletion-Layer Photoeffects in Semiconductors , 1959 .