论文信息 - Effect of charge transport through silicon nitride on thin gate oxide reliability

Effect of charge transport through silicon nitride on thin gate oxide reliability

It is shown that photoconduction is triggered in silicon nitride films when they are exposed to plasma. As a consequence of the increased conductivity, they can act as antennas, being able to collect charges from unstable plasmas and inject them into the gate oxide, thus causing charging damage. The importance of this phenomenon for deep submicron microelectronic manufacturing is discussed.

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