论文信息 - A novel dual-polarity device with symmetrical/asymmetrical S-type I-V characteristics for ESD protection design

A novel dual-polarity device with symmetrical/asymmetrical S-type I-V characteristics for ESD protection design

A novel and compact device with adjustable forward and reverse conductions and symmetrical/asymmetrical I-V characteristics for ESD (electrostatic discharge) applications is presented. The device allows for the dual-polarity conduction with the proper selection of blocking junction configurations. This design enables high-level ESD protections for various mixed-signal integrated circuits operating under a wide range of symmetrical and asymmetrical bias conditions.

J.J. Liou | J.A. Salcedo

[1] Steven H. Voldman,et al. A review of latchup and electrostatic discharge (ESD) in BiCMOS RF silicon germanium technologies: Part I - ESD , 2005, Microelectron. Reliab..

[2] Albert Wang,et al. On a dual-polarity on-chip electrostatic discharge protection structure , 2001 .

[3] C. Duvvury,et al. The impact of technology scaling on ESD robustness and protection circuit design , 1995 .

[4] Vladislav A. Vashchenko,et al. Bipolar SCR ESD devices , 2005, Microelectron. Reliab..