Thermal stability of Ti/Al/Pt/Au and Ti/Au Ohmic contacts on n-type ZnCdO

Abstract The specific contact resistivity and chemical intermixing of Ti/Au and Ti/Al/Pt/Au Ohmic contacts on n-type Zn 0.05 Cd 0.95 O layers grown on ZnO buffer layers on GaN/sapphire templates is reported as a function of annealing temperature in the range 200–600 °C. A minimum contact resistivity of 2.3 × 10 −4  Ω cm 2 was obtained at 500 °C for Ti/Al/Pt/Au and 1.6 × 10 −4  Ω cm 2 was obtained at 450 °C for Ti/Al. These values also correspond to the minima in transfer resistance for the contacts. The Ti/Al/Pt/Au contacts show far smoother morphologies after annealing even at 600 °C, whereas the Ti/Au contacts show a reacted appearance after 350 °C anneals. In the former case, Pt and Al outdiffusion is significant at 450 °C, whereas in the latter case the onset of Ti and Zn outdiffusion is evident at the same temperature. The improvement in contact resistance with annealing is suggested to occur through formation of TiO x phases that induce oxygen vacancies in the ZnCdO.

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