High-speed 600V NPT-IGBT with unclamped inductive switching (UIS) capability

In this paper, a new design concept is proposed for 600V IGBTs to achieve both fast switching and unclamped inductive switching (UIS) capability. The concept is based on optimizing p-emitter efficiency (/spl gamma/) for each condition of on-state and sustaining mode. Here the /spl gamma/ is reduced in on-state to lower the turn-off loss, but kept enough in sustaining mode to suppress the electric field. In particular, it is show that the /spl gamma/ of more than 0.4 in sustaining mode prevents the short-time UIS failure. The concept was successfully applied to NPT-IGBT, and the fabricated device has demonstrated fast switching adaptable to a frequency of 150 kHz and UIS capability of 28mJ/mm/sup 2/ at a high current density ( J/sub C/) of 200A/cm/sub 2/ (about 6 times the J/sub C/ of MOSFETs).

[1]  J.B. Bernstein,et al.  Failure dynamics of the IGBT during turn-off for unclamped inductive loading conditions , 1998, Conference Record of 1998 IEEE Industry Applications Conference. Thirty-Third IAS Annual Meeting (Cat. No.98CH36242).

[2]  Ichiro Omura,et al.  Theoretical investigations on IGBT snubberless, self-clamped drain voltage switching-off operation under a large inductive load , 1993, [1993] Proceedings of the 5th International Symposium on Power Semiconductor Devices and ICs.

[3]  Krishna Shenai,et al.  Electrothermal simulations in punchthrough and nonpunchthrough IGBT's , 1998 .

[4]  Gary M. Dolny,et al.  Optimizing 600 V punchthrough IGBT's for unclamped inductive switching (UIS) , 2000, 12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094).