论文信息 - MOVPE of high quality ZnSe: Role of mismatch on reflectivity and photoconductivity - 字舞流文

MOVPE of high quality ZnSe: Role of mismatch on reflectivity and photoconductivity

D. Coquillat | J. Calas | O. Briot | J. Lascaray | R. Aulombard | F. Hamdani | M. Avérous | N. Moulin | N. Tempier

[1] O. Briot,et al. Low temperature movpe growth of ZnSe layers using alkyls in a “double zone reactor” , 1989 .

[2] Lee,et al. Piezo- and photomodulated reflectivity spectra of ZnSe/GaAs and CdTe/InSb epilayers. , 1988, Physical review. B, Condensed matter.

[3] T. Ishida,et al. Variation of Misfit Strain in ZnSe Heteroepitaxial Layers with Temperature, Layer Thickness and Growth Temperature , 1988 .

[4] T. Yao,et al. The effect of lattice deformation on optical properties and lattice parameters of ZnSe grown on (100)GaAs , 1987 .

[5] M. Melloch,et al. Nucleation and characterization of pseudomorphic ZnSe grown on molecular beam epitaxially grown GaAs epilayers , 1987 .

[6] H. Presting,et al. Deformation Potentials of k = 0 States of Tetrahedral Semiconductors , 1984, November 1.

[7] J. C. Irwin,et al. Elastic constants of ZnSe , 1975 .

[8] Takao Koda,et al. Spin Exchange in Excitons, the Quasicubic Model and Deformation Potentials in II-VI Compounds , 1970 .

[9] M. Cardona,et al. Deformation Potentials of the Indirect and Direct Absorption Edges of AlSb , 1970 .

[10] G. Hite,et al. Excitons and the Absorption Edge in ZnSe , 1967 .

[11] J. E. Potts,et al. Effect of elastic strain on the energy band gap in heteroepitaxially grown ZnSe , 1987 .