Quantitative Investigation of Near Interface Traps in 4H-SiC MOSFETs via Drain Current Deep Level Transient Spectroscopy
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G. Pobegen | M. Hauck | M. Krieger | H. B. Weber | G. Pobegen | M. Krieger | M. Hauck | J. Weisse | J. Lehmeyer | J. Weiße | Johannes Lehmeyer | Martin Hauck
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