论文信息 - Quantitative Investigation of Near Interface Traps in 4H-SiC MOSFETs via Drain Current Deep Level Transient Spectroscopy

Quantitative Investigation of Near Interface Traps in 4H-SiC MOSFETs via Drain Current Deep Level Transient Spectroscopy

Drain current DLTS (ID-DLTS) and Hall effect measurements were carried out on two types of 4H-SiC n-MOSFETs, one with a post oxidation annealing (POA) in NO and one in O2 atmosphere. Hall effect measurements show a reduction of Dit by POA in NO compared to POA in O2 and, as a consequence, a higher inversion charge carrier density, while the Hall mobility is only weakly affected by the introduction of nitrogen during POA. Based on ID-DLTS we provide a method for a quantitative and selective investigation of near interface traps (NITs) in the oxide. It is shown that POA in NO strongly reduces the density of NITs.

[1] Gregor Pobegen,et al. On the Origin of Threshold Voltage Instability under Operating Conditions of 4H-SiC n-Channel MOSFETs , 2016 .

[2] Andrew G. Glen,et al. APPL , 2001 .

[3] L. Feldman,et al. Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide , 2000 .

[4] D. Schroder. Semiconductor Material and Device Characterization , 1990 .

[5] Tsunenobu Kimoto,et al. Alternative techniques to reduce interface traps in n‐type 4H‐SiC MOS capacitors , 2008 .

[6] W. J. Choyke,et al. Silicon carbide : recent major advances , 2004 .

[7] V. Afanas’ev,et al. Intrinsic SiC/SiO2 Interface States , 1997 .

[8] G. Snider,et al. A self‐consistent solution of Schrödinger–Poisson equations using a nonuniform mesh , 1990 .

[9] R. Kassing,et al. Deep Level Transient Fourier Spectroscopy (DLTFS)—A technique for the analysis of deep level properties , 1988 .