InxGa(1−x)N/InyGa(1−y)N superlattices grown on GaN films

High‐quality In0.22Ga0.78N/In0.06Ga0.94N superlattices were grown on GaN films with periods of 60 and 200 A by the two‐flow metalorganic chemical‐vapor deposition method. The double‐crystal x‐ray rocking curve measurements showed satellite peaks which indicated the existence of the In0.22Ga0.78N/In0.06Ga0.94N superlattices. The quantum effects were observed through room‐temperature photoluminescence (PL) measurements. These PL spectra were compared to theoretical solutions for the In0.22Ga0.78N/In0.06Ga0.94N superlattices.

[1]  W. J. Choyke,et al.  Growth of AlN/GaN layered structures by gas source molecular‐beam epitaxy , 1990 .

[2]  Takeshi Kuboyama,et al.  Properties of Ga1-xInxN Films Prepared by MOVPE , 1989 .

[3]  R. Kolbas,et al.  Photoluminescence characteristics of AlGaN‐GaN‐AlGaN quantum wells , 1990 .

[4]  H. Amano,et al.  P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI) , 1989 .

[5]  Takashi Mukai,et al.  High-Power GaN P-N Junction Blue-Light-Emitting Diodes , 1991 .

[6]  Jenkins,et al.  Electronic structures and doping of InN, InxGa1-xN, and InxAl1-xN. , 1989, Physical review. B, Condensed matter.

[7]  Shuji Nakamura,et al.  In Situ Monitoring of GaN Growth Using Interference Effects , 1991 .

[8]  Takashi Mukai,et al.  Cd-Doped InGaN Films Grown on GaN Films , 1993 .

[9]  H. Amano,et al.  Metalorganic Vapor Phase Epitaxial Growth and Properties of GaN/Al0.1Ga0.9N Layered Structures , 1991 .

[10]  H. Morkoç,et al.  GaN, AlN, and InN: A review , 1992 .

[11]  Isamu Akasaki,et al.  Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−xAlxN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE , 1989 .

[12]  Herbert Kroemer,et al.  Band offsets at heterointerfaces: Theoretical basis, and review of recent experimental work , 1986 .

[13]  D. A. Kleinman,et al.  Energy-gap discontinuities and effective masses for G a A s − Al x Ga 1 − x As quantum wells , 1984 .

[14]  Shuji Nakamura,et al.  Novel metalorganic chemical vapor deposition system for GaN growth , 1991 .

[15]  Yotaro Murakami,et al.  Preparation and optical properties of Ga1−xInxN thin films , 1975 .

[16]  Takashi Mukai,et al.  High-Quality InGaN Films Grown on GaN Films , 1992 .

[17]  Y. Kobayashi,et al.  Preparation and properties of III‐V nitride thin films , 1989 .

[18]  Takashi Matsuoka,et al.  Photoluminescence of InGaN films grown at high temperature by metalorganic vapor phase epitaxy , 1991 .