Linearity and low-noise performance of SOI MOSFETs for RF applications

The MOSFET parameters important for RF application at GHz frequencies: a) transition frequency, b) noise figure, and c) linearity are analyzed and correlated with substrate type. This work demonstrates that, without process changes, high-resistivity silicon-on-insulator (high-/spl rho/ SOI) substrates can successfully enhance the RF performance of on-chip inductors and fully depleted (FD)-SOI devices in terms of reducing substrate losses and parasitics. The linearity limitations of the SOI low-breakdown voltage and "kink" effect are addressed by judicious device and circuit design. Criteria for device optimization are derived. A NF = 1.7 dB at 2.5 GHz for a 0.25 /spl mu/m FD-SOI low-noise amplifier (LNA) on high-/spl rho/ SOI substrate obtained the lowest noise figure for applications in the L and S-bands.

[1]  P. Schley,et al.  A novel buried oxide isolation for monolithic RF inductors on silicon , 1998, International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217).

[2]  T. Ohguro,et al.  The impact of scaling down to deep-submicron on CMOS RF circuits , 1998, Proceedings of the 23rd European Solid-State Circuits Conference.

[3]  Jean-Pierre Colinge,et al.  Fully-depleted SOI CMOS for analog applications , 1998 .

[4]  J.C. Leete,et al.  A 2.4 GHz CMOS transceiver for Bluetooth , 2001, 2001 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium (IEEE Cat. No.01CH37173).

[5]  James S. Cable,et al.  Single chip wireless systems using SOI , 1999, 1999 IEEE International SOI Conference. Proceedings (Cat. No.99CH36345).

[6]  A. O. Adan.  An Advanced Shallow SIMOX/CMOS Technology for High Performance Portable Systems , 1997 .

[7]  Behzad Razavi,et al.  RF Microelectronics , 1997 .

[8]  P. M. Asbeck,et al.  Advanced thin-film silicon-on-sapphire technology: microwave circuit applications , 1998 .

[9]  H.R. Rategh,et al.  A fully-integrated 5 GHz CMOS wireless-LAN receiver , 2001, 2001 IEEE International Solid-State Circuits Conference. Digest of Technical Papers. ISSCC (Cat. No.01CH37177).

[10]  A. O. Adan,et al.  Device integration of a 0.35 /spl mu/m CMOS on shallow SIMOX technology for high-speed and low-power applications , 1996, 1996 IEEE International SOI Conference Proceedings.

[11]  T.H. Lee,et al.  A 1.5 V, 1.5 GHz CMOS low noise amplifier , 1996, 1996 Symposium on VLSI Circuits. Digest of Technical Papers.

[12]  R. Howes,et al.  A small-signal model for the frequency-dependent drain admittance in floating-substrate MOSFET's , 1992 .

[13]  Thomas H. Lee,et al.  The Design of CMOS Radio-Frequency Integrated Circuits: RF CIRCUITS THROUGH THE AGES , 2003 .

[14]  T.H. Lee,et al.  CMOS RF integrated circuits at 5 GHz and beyond , 2000, Proceedings of the IEEE.

[15]  T. Manku,et al.  Microwave CMOS-device physics and design , 1999, IEEE J. Solid State Circuits.

[16]  A.A. Abidi,et al.  Power-conscious design of wireless circuits and systems , 2000, Proceedings of the IEEE.