Low-bias, high-temperature performance of a normal-incidence InAs/GaAs vertical quantum-dot infrared photodetector with a current-blocking barrier

The growth, fabrication, and characterization of a low-bias, high-temperature, InAs/GaAs vertical quantum dot infrared photodetector with a single Al0.3Ga0.7As current-blocking barrier are described and discussed. A specific detectivity ≈3×109 cm Hz1/2/W is measured at normal incidence for a detector temperature of 100 K at a bias of 0.2 V, and detector characteristics are measured for temperatures as high as 150 K. The equivalence of the activation energy and photoionization energy for thermionic emission in quantum dots is also verified. The superior low bias performance of the photodetector ensures its compatibility with commercially available silicon read-out circuits necessary for the fabrication of a focal plane array.

[1]  Elias Towe,et al.  Photovoltaic quantum-dot infrared detectors , 2000 .

[2]  P. Bhattacharya,et al.  Observation of phonon bottleneck in quantum dot electronic relaxation. , 2001, Physical review letters.

[3]  Sanjay Krishna,et al.  Normal-incidence, high-temperature, mid-infrared, InAs-GaAs vertical quantum-dot infrared photodetector , 2001 .

[4]  Gerhard Abstreiter,et al.  Normal-incident intersubband photocurrent spectroscopy on InAs/GaAs quantum dots , 1999 .

[5]  P. Bhattacharya,et al.  Far-infrared photoconductivity in self-organized InAs quantum dots , 1998 .

[6]  D. Klotzkin,et al.  Quantum capture times at room temperature in high-speed In/sub 0.4/Ga/sub 0.6/As-GaAs self-organized quantum-dot lasers , 1997, IEEE Photonics Technology Letters.

[7]  Sanjay Krishna,et al.  High-detectivity, normal-incidence, mid-infrared (λ∼4 μm)InAs/GaAs quantum-dot detector operating at 150 K , 2001 .

[8]  Victor Ryzhii,et al.  The theory of quantum-dot infrared phototransistors , 1996 .

[9]  Antoni Rogalski.  Assessment of HgCdTe photodiodes and quantum well infrared photoconductors for long wavelength focal plane arrays , 1999 .

[10]  Elias Towe,et al.  NORMAL-INCIDENCE INTERSUBBAND (IN, GA)AS/GAAS QUANTUM DOT INFRARED PHOTODETECTORS , 1998 .

[11]  Jamie D. Phillips,et al.  Self-assembled InAs-GaAs quantum-dot intersubband detectors , 1999 .

[12]  J. Singh,et al.  Possibility of room temperature intra-band lasing in quantum dot structures placed in high-photon density cavities , 1996, IEEE Photonics Technology Letters.

[13]  W. Gawron,et al.  Ultimate performance of infrared photodetectors and figure of merit of detector material , 1997 .

[14]  P. Petroff,et al.  Intersublevel transitions in InAs/GaAs quantum dots infrared photodetectors , 1998 .

[15]  J. Brault,et al.  Strong normal-incidence infrared absorption in self-organized InAs/InAlAs quantum dots grown on InP(001) , 1999 .

[16]  Hooman Mohseni,et al.  Growth and characterization of InGaAs/InGaP quantum dots for midinfrared photoconductive detector , 1998 .

[17]  Clifton G. Fonstad,et al.  Theory, fabrication and characterization of quantum well infrared photodetectors , 2000 .

[18]  J. Gerard,et al.  IN-PLANE POLARIZED INTRABAND ABSORPTION IN INAS/GAAS SELF-ASSEMBLED QUANTUM DOTS , 1998 .

[19]  Meimei Z. Tidrow,et al.  Device physics and state-of-the-art of quantum well infrared photodetectors and arrays , 2000 .

[20]  K. M. S. V. Bandara,et al.  Recent Developments in Quantum-Well Infrared Photodetectors , 1995 .

[21]  B. F. Levine,et al.  Quantum‐well infrared photodetectors , 1993 .

[22]  M. Segev,et al.  Mid-infrared photoconductivity in InAs quantum dots , 1997 .