InAs/GaSb superlattice resonant tunneling diode photodetector with InAs/AlSb double barrier structure

We report on a resonant tunneling diode (RTD) photodetector using type-II InAs/GaSb superlattices with an InAs/AlSb double barrier structure. At 80 K, the maximum response of the detector is at about 4.0 μm and the 50% cutoff wavelength is 4.8 μm. The resonant tunneling mechanism is confirmed by observing the negative differential resistance (NDR) phenomenon. The detector is also tested under illumination by a laser with a wavelength of 3.3 μm. A significant photocurrent and NDR peak shift are observed when changing the laser illumination power. The internal multiplication factor, which means how many excess electrons can be triggered by one absorbed photon, is estimated to be 1.01 × 105 at 4.9 V and is 1.90 × 103 at 1.4 V.We report on a resonant tunneling diode (RTD) photodetector using type-II InAs/GaSb superlattices with an InAs/AlSb double barrier structure. At 80 K, the maximum response of the detector is at about 4.0 μm and the 50% cutoff wavelength is 4.8 μm. The resonant tunneling mechanism is confirmed by observing the negative differential resistance (NDR) phenomenon. The detector is also tested under illumination by a laser with a wavelength of 3.3 μm. A significant photocurrent and NDR peak shift are observed when changing the laser illumination power. The internal multiplication factor, which means how many excess electrons can be triggered by one absorbed photon, is estimated to be 1.01 × 105 at 4.9 V and is 1.90 × 103 at 1.4 V.

[1]  Henrique M. Salgado,et al.  Photo-Detectors Integrated with Resonant Tunneling Diodes , 2013, Sensors.

[2]  Ning Li,et al.  High photoexcited carrier multiplication by charged InAs dots in AlAs/GaAs/AlAs resonant tunneling diode , 2008 .

[3]  Frank Rutz,et al.  InAs/GaSb superlattices for advanced infrared focal plane arrays , 2009 .

[4]  Shulong Lu,et al.  Impact of band structure of Ohmic contact layers on the response feature of p-i-n very long wavelength type II InAs/GaSb superlattice photodetector , 2015 .

[5]  D. Ting,et al.  A high-performance long wavelength superlattice complementary barrier infrared detector , 2009 .

[6]  Elena Plis,et al.  Performance improvement of longwave infrared photodetector based on type-II InAs/GaSb superlattices using unipolar current blocking layers , 2010 .

[7]  Safumi Suzuki,et al.  Wireless data transmission of 30 Gbps at a 500-GHz range using resonant-tunneling-diode terahertz oscillator , 2016, 2016 IEEE MTT-S International Microwave Symposium (IMS).

[8]  Dongsheng Li,et al.  Mid-wavelength type II InAs/GaSb superlattice infrared focal plane arrays , 2016 .

[9]  A J Shields,et al.  Efficient single photon detection by quantum dot resonant tunneling diodes. , 2005, Physical review letters.

[10]  Sven Höfling,et al.  Cavity-enhanced resonant tunneling photodetector at telecommunication wavelengths , 2014 .

[11]  Sven Höfling,et al.  Photocurrent-voltage relation of resonant tunneling diode photodetectors , 2015 .

[12]  Jue Wang,et al.  Resonant tunnelling diode based high speed optoelectronic transmitters , 2017, Applications of Optics and Photonics.

[13]  Sven Höfling,et al.  Sensitivity of resonant tunneling diode photodetectors , 2016, Nanotechnology.

[14]  Safumi Suzuki,et al.  Fundamental oscillation of resonant tunneling diodes above 1 THz at room temperature , 2010 .

[15]  Sven Höfling,et al.  GaAs/AlGaAs resonant tunneling diodes with a GaInNAs absorption layer for telecommunication light sensing , 2012 .

[16]  L. K. Castelano,et al.  Temperature tuning from direct to inverted bistable electroluminescence in resonant tunneling diodes , 2017 .

[17]  Effect of InAs dots on noise of quantum dot resonant tunneling single-photon detectors , 2006 .

[18]  Paul R. Berger,et al.  431 kA/cm 2 peak tunneling current density in GaN/AlN resonant tunneling diodes , 2018 .

[19]  Yajun Wei,et al.  Very high quantum efficiency in type-II InAs/GaSb superlattice photodiode with cutoff of 12 μm , 2007 .

[20]  Paul R. Berger,et al.  Highly repeatable room temperature negative differential resistance in AlN/GaN resonant tunneling diodes grown by molecular beam epitaxy , 2016 .