A model for anomalous short-channel behavior in submicron MOSFETs

Experimental data and simulation results for submicron MOSFETs are reported and used to support a physical explanation for two important anomalies in the dependence of device threshold voltage on channel length. They are the widely observed increase in threshold voltage with decreasing channel length (roll-up), and the more recent observation that the ultimate threshold voltage decrease (roll-off) occurs at a rate which is far in excess of that which can be explained with conventional models of laterally uniform channel doping. A model that attributes roll-up as well as roll-off to lateral redistribution of doping near the source and drain junctions is proposed. This lateral redistribution is caused by crystal defects formed during post-source/drain-implant anneal. The resulting profile consists of an enhancement of background doping adjacent to the junction edge, bounded by a depression of the doping farther into the channel.<<ETX>>