论文信息 - CuO/SnO2 thin film heterostructures as chemical sensors to H2S

CuO/SnO2 thin film heterostructures as chemical sensors to H2S

Abstract CuO/SnO2 heterostructures as well as SnO2(CuO) polycrystalline films have been studied for H2S sensing. Gas sensing properties of these materials have been compared in conditions: 25–300 ppm H2S in N2 at 100–250°C. A shorter response time of the heterostructures as compared to that of the SnO2(CuO) films has been found. It is suggested that the improvement of dynamic sensor properties of SnO2/CuO heterostructures is caused by the localization of electrical barrier between CuO and SnO2 layers.

[1] A. Šetkus,et al. Copper-doping level effect on sensitivity and selectivity of tin oxide thin-film gas sensor , 1995 .

[2] Wolfgang Göpel,et al. Ultimate limits in the miniaturization of chemical sensors , 1996 .

[3] M. Rumyantseva,et al. Copper diffusion in SnO2 polycrystalline films , 1994 .

[4] M. Miyayama,et al. Effects of interface states on gas-sensing properties of a CuO/ZnO thin-film heterojunction , 1994 .

[5] G. Heiland,et al. Homogeneous semiconducting gas sensors , 1981 .

[6] Norio Miura,et al. CuO-SnO2 element for highly sensitive and selective detection of H2S , 1992 .

[7] M. Rumyantseva,et al. Influence of copper on sensor properties of tin dioxide films in H2S , 1996 .

[8] S. Manorama,et al. Hydrogen sulfide sensor based on tin oxide deposited by spray pyrolysis and microwave plasma chemical vapor deposition , 1994 .