论文信息 - Reducing the electronic band gap of BN monolayer by coexistence of P(As)-doping and external electric field - 字舞流文

Reducing the electronic band gap of BN monolayer by coexistence of P(As)-doping and external electric field

M. Naseri | N. Hieu | G. Cocoletzi | D. M. Hoat | J. Rivas-Silva | R. Ponce-Pérez | T. Vu