论文信息 - SiGe-technology and components for mobile communication systems

SiGe-technology and components for mobile communication systems

SiGe-HBTs offer the opportunity to build integrated front-ends for mobile communication systems above 1 GHz. SiGe-HBTs with 50 GHz f/sub T/ and f/sub max/ were obtained by a production process including poly-silicon resistors, nitride capacitors and spiral inductors showing Q values up to 10. RF-noise figures down to 1 dB at 2 GHz with an associated gain of 14 dB and 1 Hz 1/f corner frequency were obtained. Class A load pull measurements on power SiGe-HBTs at 1.9 GHz exhibited a power added efficiency (PAE) of 44% at 1W RF output power. Power amplifiers, low noise amplifiers and mixer circuits are presently under investigation.

[1] A. Schuppen,et al. SiGe-HBTs with high fT at moderate current densities , 1994 .

[2] H. Schumacher,et al. Class-A SiGe HBT power amplifiers at C-band frequencies , 1995, IEEE Microwave and Guided Wave Letters.

[3] A. Schuppen,et al. High speed SiGe heterobipolar transistors , 1995 .

[4] W. Kruppa,et al. Si/Si/sub 1-x/Gex heterojunction bipolar transistors with high breakdown voltage , 1995, IEEE Electron Device Letters.

[5] J. Babcock,et al. Low-frequency noise characteristics of UHV/CVD epitaxial Si- and SiGe-base bipolar transistors , 1996, IEEE Electron Device Letters.

[6] U. Seiler,et al. 1-W SiGe power HBTs for mobile communication , 1996, IEEE Microwave and Guided Wave Letters.