论文信息 - Development of the Two-Shaping-Elements (TSE) method for silicon sheet growth - 字舞流文

Development of the Two-Shaping-Elements (TSE) method for silicon sheet growth

B. Epelbaum | A. Sitnikov | S. K. Brantov | K. Filonov | L. V. Miheeva

[1] V. A. Tatarchenko,et al. Shaped crystal growth using two shaping elements (TSE): Physical features of the method and its application to silicon/carbon composite materials production , 1987 .