Study of Dill's B parameter measurement of EUV resist

Our group previously explored methods for measuring simulation parameter for advanced chemically amplified (CA) resists, including development parameters [1]. Dill’s C parameter [2-3] , acid diffusion length generated from PAG [4], and de-protection reaction parameters [5-6]. We performed simulations of EUV resists using these parameters, the results of which allowed us to examine the conditions for reducing LER and improving resolution. This paper discusses a method for measuring the Dill’s B parameter, which had been difficult to measure with conventional methods. We also confirmed that enhancing the resist polymer’s EUV light absorption is effective in improving the sensitivity of the CA resist.

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