A transient analytical model for predicting the redistribution of injected interstitials

A general formal transient solution to the linear boundary value problem which governs the transport of interstitials injected into an arbitrary bounded domain from oxidizing segments on the surface is presented. An explicit expression for the Green's function which appears as the kernel in the integral representation of the general transient solution is given for a simple domain of interest in the study of oxidation-enhanced diffusion (OED). By combining this explicit expression for the Green's function with the general formal solution, a transient analytical model for predicting the redistribution of interstitials injected into the simple domain from a single oxidizing segment is obtained. An illustrated example important to OED is considered and results obtained with the model and by approximations to the model are compared. Also, the results obtained with the SUPREM-IV program are presented for comparison. >

[1]  R.W. Dutton,et al.  Process design using two-dimensional process and device simulators , 1982, IEEE Transactions on Electron Devices.

[2]  Robert W. Dutton,et al.  The efficient simulation of coupled point defect and impurity diffusion , 1988, IEEE Trans. Comput. Aided Des. Integr. Circuits Syst..

[3]  L. Borucki,et al.  FEDSS: a 2D semiconductor fabrication process simulator , 1985 .

[4]  Yoshiaki Matsushita,et al.  Kinetics of self‐interstitials generated at the Si/SiO2 interface , 1983 .

[5]  A. S. Grove,et al.  General Relationship for the Thermal Oxidation of Silicon , 1965 .

[6]  R. Fair,et al.  A Quantitative Model for the Diffusion of Phosphorus in Silicon and the Emitter Dip Effect , 1977 .

[7]  B. Penumalli,et al.  A comprehensive two-dimensional VLSI process simulation program, BICEPS , 1983, IEEE Transactions on Electron Devices.

[8]  U. Gösele,et al.  Point defects, diffusion processes, and swirl defect formation in silicon , 1985 .

[9]  Ronald W. Knepper,et al.  Two-dimensional process modeling: a description of the SAFEPRO program , 1985 .

[10]  U. Gösele,et al.  Oxidation‐enhanced or retarded diffusion and the growth or shrinkage of oxidation‐induced stacking faults in silicon , 1982 .

[11]  Daniel Mathiot,et al.  Dopant diffusion in silicon: A consistent view involving nonequilibrium defects , 1984 .

[12]  Robert W. Dutton,et al.  The lateral effect of oxidation on boron diffusion in 〈100〉 silicon , 1979 .

[13]  R. F. Lever,et al.  Boron diffusion in silicon at high concentrations , 1988 .

[14]  Brian J. Mulvaney,et al.  PEPPER-a process simulator for VLSI , 1989, IEEE Trans. Comput. Aided Des. Integr. Circuits Syst..

[15]  Robert W. Dutton,et al.  Verification of analytic point defect models using SUPREM-IV [dopant diffusion] , 1988, IEEE Trans. Comput. Aided Des. Integr. Circuits Syst..

[16]  C. D. Maldonado ROMANS II A two-dimensional process simulator for modeling and simulation in the design of VLSI devices , 1983 .

[17]  S. M. Hu,et al.  Kinetics of interstitial supersaturation during oxidation of silicon , 1983 .

[18]  R. F. Lever,et al.  Enhanced ‘‘tail’’ diffusion of phosphorus and boron in silicon: Self‐interstitial phenomena , 1986 .

[19]  K. Taniguchi,et al.  IMPACT—A point-defect-based two-dimensional process simulator: Modeling the lateral oxidation-enhanced diffusion of dopants in silicon , 1986, IEEE Transactions on Electron Devices.

[20]  S. M. Hu,et al.  Interstitial and vacancy concentrations in the presence of interstitial injection , 1985 .

[21]  James D. Plummer,et al.  Analytical relationship for the oxidation of silicon in dry oxygen in the thin‐film regime , 1987 .

[22]  H. Iwai,et al.  Two-dimensional computer simulation models for MOSLSI fabrication processes , 1981, IEEE Transactions on Electron Devices.