High temperature liquid phase epitaxy of (100) oriented GaInAsSb near the miscibility gap boundary

Abstract The Ga 1- x In x As y Sb 1- y quaternary alloy has been grown by liquid phase epitaxy at high temperature ( T = 600–615° C) on (100) oriented GaSb substrate. The highest indium concentration in the solid phase that could be achieved for perfect GaSb-lattice-matched layers was x = 0.23, which corresponds to a band-gap cut off wavelength λ = 2.39 μm at room temperature. Thermodynamical calculations show this composition ( x = 0.23 y = 0.20) is situated at the boundary of the solid phase miscibility gap (binodal curve). Mismatched quaternary layers with more indium content (up to x = 0.52) could be grown outside the miscibility gap, but their morphology was bad.

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