论文信息 - Germanium–Tin (GeSn) p-Channel MOSFETs Fabricated on (100) and (111) Surface Orientations With Sub-400 $^{\circ}\hbox{C}\ \hbox{Si}_{2}\hbox{H}_{6}$ Passivation - 字舞流文

Germanium–Tin (GeSn) p-Channel MOSFETs Fabricated on (100) and (111) Surface Orientations With Sub-400 $^{\circ}\hbox{C}\ \hbox{Si}_{2}\hbox{H}_{6}$ Passivation

Y. Yeo | D. Antoniadis | G. Han | S. Su | Yue Yang | P. Guo | B. Cheng | X. Gong | Dongliang Zhang | Jisheng Pan | C. Xue | Zheng Zhang | E. Tok | Guangze Zhang | Ran Cheng | Fan Bai