Methodology of accelerated aging

Outlines are given for eight alternative black-box (i.e., input-output) methodologies that are appropriate for estimating, from external characteristics, the reliability of semiconductor lasers or other gradually degrading manufactured products with lifetimes too long to measure directly over practical time spans. These reliability estimates, which are essential for various components of such systems as submarine communication cables or satellites, are obtained from two classes of data. One class consists of the measured properties of statistically equivalent components, i.e., samples from the manufactured population, that have been operated to failure or at least to a significant degree of degradation. This degradation is often brought about in a shortened time span through the application of a temperature or other “accelerating stress” that is large compared to the operating temperature or other stress of the intended application. The other class of data is, for each component, comprised of the predeployment properties of that very component, including particularly its own predeployment degradation rate (which may also be measured under accelerating stresses). Brief consideration is given in passing to important special cases when only one of these two classes of data is available.

[1]  Joseph B. Brauer,et al.  Microcircuit Accelerated Testing Using High Temperature Operating Tests , 1975, IEEE Transactions on Reliability.

[2]  H. Kawano,et al.  Rapid degradation of InGaAsP/InP double heterostructure lasers due to 〈110〉 dark line defect formation , 1982 .

[3]  A. R. Eckler A statistical approach to laser certification , 1985, AT&T Technical Journal.

[4]  Naoki Chinone,et al.  Acceleration of the gradual degradation in (GaAl)As double‐heterostructure lasers as an exponent of the value of the driving current , 1979 .

[5]  M. Fukuda,et al.  Stress tests on 1.3 μm buried-heterostructure laser diode , 1983 .

[6]  K. Mizuishi Statistical analysis of aging-induced degradation (or lifetime) variation in (Al, Ga)As/GaAs double-heterostructure lasers , 1983 .

[7]  S.S. Clheng Optimal Replacement Rate of Devices with Lognormal Failure Distributions , 1977, IEEE Transactions on Reliability.

[8]  R. L. Hartman,et al.  Selection of a laser reliability assurance strategy for a long-life application , 1985, AT&T Technical Journal.

[9]  D. S. Peck,et al.  The reliability of semiconductor devices in the bell system , 1974 .

[10]  Edward B. Fowlkes,et al.  Some Methods for Studying the Mixture of Two Normal (Lognormal) Distributions , 1979 .

[11]  W. Joyce,et al.  Thermal resistance of heterostructure lasers , 1975 .

[12]  B. Hakki,et al.  Catastrophic failure in GaAs double-heterostructure injection lasers , 1974 .

[13]  M. Ettenberg,et al.  Accelerated step-temperature aging of Al/x/Ga/1-x/As heterojunction laser diodes , 1978 .

[14]  E.I. Gordon,et al.  Purging: A reliability assurance technique for new technology semiconductor devices , 1983, IEEE Electron Device Letters.

[15]  Hiroshi Ishikawa,et al.  Accelerated aging test of Ga1−xAlxAs DH lasers , 1979 .

[16]  B. Deloach,et al.  Alignment of Gaussian beams. , 1984, Applied optics.

[17]  Melville S. Green,et al.  Markoff Random Processes and the Statistical Mechanics of Time‐Dependent Phenomena. II. Irreversible Processes in Fluids , 1954 .

[18]  C. M. Melliar-Smith,et al.  Reliability and Failure Mechanisms of Electronic Materials , 1978 .

[19]  W. O. Schlosser,et al.  A Large Scale Reliability Study of Burnout Failure in GaAs Power FETs , 1980, 18th International Reliability Physics Symposium.

[20]  W. B. Joyce,et al.  Electrical derivative characteristics of InGaAsP buried heterostructure lasers , 1982 .

[21]  D. Lang Recombination-Enhanced Reactions in Semiconductors , 1982 .

[22]  W. B. Joyce,et al.  Statistical characterization of the lifetimes of continuously operated (Al,Ga)As double‐heterostructure lasers , 1976 .

[23]  R. H. Saul,et al.  Competing processes in long term accelerated aging of double heterostructure Ga1−xAlxAs light emitting diodes , 1982 .

[24]  V. G. Keramidas,et al.  High-temperature degradation of InGaAsP/InP light emitting diodes , 1981 .

[25]  Melville S. Green,et al.  Markoff Random Processes and the Statistical Mechanics of Time-Dependent Phenomena , 1952 .

[26]  B. W. Hakki,et al.  1.3-µm Laser reliability determination for submarine cable systems , 1985, AT&T Technical Journal.

[27]  F. Reynolds Thermally accelerated aging of semiconductor components , 1974 .

[28]  A. S. Jordan A comprehensive review of the lognormal failure distribution with application to LED reliability , 1978 .

[29]  Niloy K. Dutta,et al.  Calculated temperature dependence of threshold current of GaAs‐AlxGa1−xAs double heterostructure lasers , 1981 .

[30]  R. Dixon,et al.  Accelerated aging and a uniform mode of degradation in (Al,Ga)As double-heterostructure lasers , 1977 .

[31]  R. Dixon,et al.  Reliability of DH GaAs lasers at elevated temperatures , 1975 .

[32]  A. S. Jordan Confidence limits on the failure rate and a rapid projection nomogram for the lognormal distribution , 1984 .

[33]  P. A. Turner,et al.  Electromigration of Ti–Au thin‐film conductors at 180° C , 1974 .

[34]  B. W. Hakki,et al.  Degradation of CW GaAs double-heterojunction lasers at 300 K , 1973 .