GeSn p-i-n photodetector for all telecommunication bands detection.

Using a 820 nm-thick high-quality Ge0.97Sn0.03 alloy film grown on Si(001) by molecular beam epitaxy, GeSn p-i-n photodectectors have been fabricated. The detectors have relatively high responsivities, such as 0.52 A/W, 0.23 A/W, and 0.12 A/W at 1310 nm, 1540 nm, and 1640 nm, respectively, under a 1 V reverse bias. With a broad detection spectrum (800-1800 nm) covering the whole telecommunication windows and compatibility with conventional complementary metal-oxide-semiconductors (CMOS) technology, the GeSn devices are attractive for applications in both optical communications and optical interconnects.

[1]  H. Radamson,et al.  Low-temperature growth and critical epitaxial thicknesses of fully strained metastable Ge1−xSnx (x≲0.26) alloys on Ge(001)2×1 , 1998 .

[2]  Wei Wang,et al.  Epitaxial growth and thermal stability of Ge1-xSnx alloys on Ge-buffered Si(001) substrates , 2011 .

[3]  Kazumi Wada,et al.  High-performance, tensile-strained Ge p-i-n photodetectors on a Si platform , 2005 .

[4]  Kazumi Wada,et al.  Efficient high-speed near-infrared Ge photodetectors integrated on Si substrates , 2000 .

[5]  J. Michel,et al.  High-performance Ge-on-Si photodetectors , 2010 .

[6]  Jurgen Michel,et al.  High performance, waveguide integrated Ge photodetectors. , 2007, Optics express.

[7]  G. Assanto,et al.  Low Dark-Current Germanium-on-Silicon Near-Infrared Detectors , 2007, IEEE Photonics Technology Letters.

[8]  Stefan Zollner,et al.  Optical critical points of thin-film Ge 1-y Sn y alloys: A comparative Ge 1-y Sn y /Ge 1-x Si x study , 2006 .

[9]  John Kouvetakis,et al.  TIN-BASED GROUP IV SEMICONDUCTORS: New Platforms for Opto- and Microelectronics on Silicon , 2006 .

[10]  Shui-Qing Yu,et al.  Extended performance GeSn/Si(100) p-i-n photodetectors for full spectral range telecommunication applications , 2009 .

[11]  Xue Chunlai,et al.  Zero biased Ge-on-Si photodetector with a bandwidth of 4.72 GHz at 1550 nm ⁄ , 2009 .

[12]  V. D'costa,et al.  Sn-alloying as a means of increasing the optical absorption of Ge at the C- and L-telecommunication bands , 2009 .

[13]  Stefan Zollner,et al.  Ge–Sn semiconductors for band-gap and lattice engineering , 2002 .

[14]  H. Atwater,et al.  Synthesis of epitaxial SnxGe1−x alloy films by ion‐assisted molecular beam epitaxy , 1995 .