论文信息 - Fundamental oscillation up to 915GHz in InGaAs/AlAs resonant tunneling diodes integrated with slot antennas

Fundamental oscillation up to 915GHz in InGaAs/AlAs resonant tunneling diodes integrated with slot antennas

A fundamental oscillation up to 915GHz was observed at room temperature in InGaAs/AlAs resonant tunneling diode integrated with planar slot antennas. By reducing the mesa area, parasitic capacitance of resonant tunneling diode was decreased. The output power was small (around a few tens nW) at present because of a small area (≈0.63μm2) and a low available current density (≈3mA/μm2) which is the difference in current density between the peak and valley. The dependence of fundamental oscillation frequency on mesa area is also shown.

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