High‐power vertical‐cavity surface‐emitting AlGaAs/GaAs diode lasers

Vertical‐cavity surface emitters with rear mirrors made of conductive semiconductor stack reflectors (Rr =98%) were developed. Current confinement is obtained via an etch and regrowth technique with no need for dielectrics. Peak powers of 120 mW were achieved at room temperature. The external differential quantum efficiency is 15%.

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