6.1 W continuous wave front-facet power from Al-free active-region (λ=805 nm) diode lasers

Al-free active-region diode lasers grown by low-pressure, metal-organic chemical vapor deposition and emitting at λ=805 nm have been optimized for high continuous wave output power. The 1-mm-long devices consisting of an InGaAsP/In0.5Ga0.5P/In0.5(Ga0.5Al0.5)0.5P laser structure have a threshold-current density, Jth, of 310 A/cm2 and relatively high values for the characteristic temperatures of the threshold current, T0 (135 K), and differential quantum efficiency, T1 (900 K). Lasers with 10%/90% coatings and a 100-μm-wide stripe provide a maximum cw output power of 6.1 W at a heatsink temperature of 10 °C. The devices fail due to catastrophic optical mirror damage (COMD), where the internal power density, PCOMD, is 17.4 MW/cm2; that is, twice that for conventionally facet-coated, 810 nm emitting, AlGaAs active-region diode lasers.

[1]  Dan Botez,et al.  5 W continuous wave power, 0.81-μm-emitting, Al-free active-region diode lasers , 1997 .

[2]  Stefan Mohrdiek,et al.  Highly efficient 808-nm-range Al-free lasers by gas source MBE , 1997, Photonics West.

[3]  Dan Botez,et al.  High continuous wave power, 0.8 μm-band, Al-free active-region diode lasers , 1997 .

[4]  John C. Connolly,et al.  8 W continuous wave front‐facet power from broad‐waveguide Al‐free 980 nm diode lasers , 1996 .

[5]  John C. Connolly,et al.  High-power separate-confinement heterostructure AlGaAs/GaAs laser diodes with broadened waveguide , 1996, Photonics West.

[6]  Dan Botez,et al.  High continuous wave output power InGaAs/InGaAsP/InGaP diode lasers: Effect of substrate misorientation , 1995 .

[7]  Toshiro Hayakawa,et al.  Highly Reliable Operation of High-Power InGaAsP/InGaP/AlGaAs 0.8 µ m Separate Confinement Heterostructure Lasers , 1995 .

[8]  Manijeh Razeghi,et al.  OPTIMIZED STRUCTURE FOR INGAASP/GAAS 808 NM HIGH POWER LASERS , 1995 .

[9]  D. Welch,et al.  High power 875 nm Al-free laser diodes , 1994, IEEE Photonics Technology Letters.

[10]  Harvey B. Serreze,et al.  Reliability of GaAs-based semiconductor diode lasers: 0.6-1.1 mu m , 1993 .

[11]  S. L. Yellen,et al.  Dark-line-resistant, aluminum-free diode laser at 0.8 mu m , 1992, IEEE Photonics Technology Letters.

[12]  Eli Yablonovitch,et al.  Nearly ideal InP/In0.53Ga0.47As heterojunction regrowth on chemically prepared In0.53Ga0.47As surfaces , 1992 .

[13]  D. Garbuzov,et al.  High-power 0.8 mu m InGaAsP-GaAs SCH SQW lasers , 1991 .

[14]  Y. Kokubo,et al.  High-power operation of broad-area laser diodes with GaAs and AlGaAs single quantum wells for Nd:YAG laser pumping , 1991 .