Characterization of cyclic delamination behavior of thin film multilayers

Abstract The increasing number of thin film interfaces in modern microelectronic components makes determining fatigue delamination properties and understanding the underlying mechanisms a necessity to ensure the reliability of such devices. In this work an advanced four-point bending setup for cyclic delamination investigations of multi-layered thin film samples has been developed. The static and cyclic delamination behaviour of two types of Si/SiN/TiW/Cu/Polyimide thin film stacks has been investigated. By calculating the delamination growth rate da/dN in relation to the cyclic energy release rate range ΔG, it is shown that the cyclic delamination occurs at levels lower than those observed under static loading. The dynamic bending experiments also indicated a threshold of the energy release rate for the onset and propagation of the adhesive delamination.

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