Phase diagram and LPE growth of quaternary InGaAsP on GaAs

[1]  R. Kúdela,et al.  Immiscibility in In1−xGax P1−y Asy Lattice Matched to GaAs , 1986 .

[2]  K. Hiramatsu,et al.  Analysis of Compositional Variation at Initial Transient Time in LPE Growth of InGaAsP/GaAs System , 1985 .

[3]  M. Umeno,et al.  Room Temperature Operation of Visible (λ=658.6 nm) InGaAsP DH Laser Diodes on GaAsP , 1985 .

[4]  Y. Hamakawa,et al.  A Study on LPE Growth of In1-xGaxP1-yAsy(y ≃0) on (100) GaAs Substrate , 1985 .

[5]  K. Wakao,et al.  Room‐temperature cw operation of InGaAsP/InGaP lasers at 727 nm grown on GaAs substrates by liquid phase epitaxy , 1984 .

[6]  S. Slempkes,et al.  High mobility in liquid phase epitaxial InGaAsP free of composition modulations , 1983 .

[7]  S. Mukai Photoluminescent and electrical properties of InGaPAs mixed crystals liquid phase epitaxially grown on (100) GaAs , 1983 .

[8]  S. Chikichev,et al.  Experimental examination of gaas dissolution in in-p melt , 1983 .

[9]  Yu. B. Bolkhovityanov,et al.  Instability of “slow” solid‐liquid interface relaxation before the hetero‐LPE of III‐V compounds , 1983 .

[10]  T. Ishida,et al.  LPE Growth of In1-xGaxAs1-yPy with Narrow Photoluminescence Spectrum on GaAs (111)B Substrates , 1982 .

[11]  H. Launois,et al.  Composition modulation in liquid phase epitaxial InxGa1−xAsyP1−y layers lattice matched to InP substrates , 1982 .

[12]  Kentaro Onabe,et al.  Calculation of Miscibility Gap in Quaternary InGaPAs with Strictly Regular Solution Approximation , 1982 .

[13]  H. Launois,et al.  InxGa1−xAsyP1−y alloy stabilization by the InP substrate inside an unstable region in liquid phase epitaxy , 1982 .

[14]  K. Onabe Thermodynamics of type A1−xBxC1−yDy III–V quaternary solid solutions , 1982 .

[15]  H. Yajima,et al.  Fabrication and Visible-Light-Emission Characteristics of Room-Temperature-Operated InGaPAs DH Diode Lasers Grown on GaAs Substrates , 1981 .

[16]  H. Matsunami,et al.  LPE Growth and Photoluminescence of In1-xGaxP1-yASy, on GaAs , 1981 .

[17]  C. Morrison,et al.  Ga‐In‐As solidus isotherms developed by the step‐grading technique , 1980 .

[18]  S. Mukai,et al.  LPE Growth and Luminescence of In1-xGaxPyAs1-y on (1, 0, 0) GaAs with Band-Gap Energy in Region of 1.569 eV≤Eg≤1.893 eV , 1980 .

[19]  H. Matsunami,et al.  Lattice-Matched LPE Growth of In1-xGaxP1-yAsy Layers on (100) GaAs Substrates , 1980 .

[20]  N. Holonyak,et al.  Single thin‐active‐layer visible‐spectrum In1−xGaxP1−zAsz heterostructure lasers , 1978 .

[21]  A. S. Jordan,et al.  Solid-liquid equilibria for quaternary solid solutions involving compound semiconductors in the regular solution approximation , 1975 .

[22]  M. Panish,et al.  Phase equilibria in III–V quaternary systems—application to Al-Ga-P-As , 1974 .

[23]  A. S. Jordan,et al.  Activity Coefficients for a Regular Multicomponent Solution , 1972 .

[24]  L. Vieland Phase equilibria of III–V compounds , 1963 .