论文信息 - 17 GHz broadband amplifier with 25 dB gain using a 0.3 /spl mu/m AlGaAs/GaAs/AlGaAs HEMT technology

17 GHz broadband amplifier with 25 dB gain using a 0.3 /spl mu/m AlGaAs/GaAs/AlGaAs HEMT technology

A broadband amplifier chip based on AlGaAs/GaAs/AlGaAs quantum well FETs with 0.3 /spl mu/m gate length has been designed and fabricated. The amplifier can be operated with single-ended or differential inputs with an input resistance of 50 /spl Omega/. The output signals are differential with both internal load resistances at 100 /spl Omega/, the chip area is 1/spl times/1 mm/sup 2/, and the power consumption is /spl sim/375 mW.

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