Original method of diagnostics and modification of II-VI and III-V semiconductors

The purpose of this paper is the investigation of a photostimulated modification of optical properties of semiconductors subsurface region. The experiments have been carried out on the II-VI (CdS,CdTe) and III-V (GaAs) semiconductor monocrystals. We have shown, that during the photostimulated process the enriching of cadmium is occurring in the subsurface region of CdS monocrystal and thus the complex refractive index is strongly changed. The first time this phenomenon was detected and investigated by us in CdS-single crystal it was named low temperature photohydromodification (LPHM). In this paper LPHM-phenomenon is discovered in GaAs and CdTe crystals. We have theoretically shown that the subsurface region refractive index changes take place due to increasing of clusters concentration, that consist from interstitial atoms, and changing of their forms during LPHM-process.