A Study of Relaxation Current in
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Guido Groeseneken | Luigi Pantisano | Marc Heyns | Robin Degraeve | Zhen Xu | Eduard A. Cartier | Andreas Kerber | R. Degraeve | E. Cartier | M. Heyns | G. Groeseneken | A. Kerber | L. Pantisano | Zhen Xu
[1] T. R. Oldham,et al. Spatial Dependence of Trapped Holes Determined from Tunneling Analysis and Measured Annealing , 1986, IEEE Transactions on Nuclear Science.
[2] K. Kukli,et al. Dielectric oxide nanolaminates deposited by atomic layer epitaxy , 1997 .
[3] Hans Reisinger,et al. Transient conduction in multidielectric silicon–oxide–nitride–oxide semiconductor structures , 2001 .
[4] A. Maradudin,et al. Theory of dielectrics , 1949 .
[5] A. Jonscher. Dielectric relaxation in solids , 1983 .
[6] R. Wallace,et al. High-κ gate dielectrics: Current status and materials properties considerations , 2001 .
[7] Problems with metal-oxide high-/spl kappa/ dielectrics due to 1/t dielectric relaxation current in amorphous materials , 2003, IEEE International Electron Devices Meeting 2003.
[8] D. R. Wolters,et al. Kinetics of charge trapping in dielectrics , 1985 .
[9] G. Lucovsky. Transition from thermally grown gate dielectrics to deposited gate dielectrics for advanced silicon devices: A classification scheme based on bond ionicity , 2001 .
[10] T. Horikawa,et al. Dielectric Relaxation of (Ba, Sr)TiO3 Thin Films , 1995 .
[11] E. Bertagnolli,et al. Slow trap response of zirconium dioxide thin films on silicon , 2003 .
[12] G. Wilk,et al. Chemical vapor deposition of HfO2 films on Si(100) , 2002 .
[13] Stefan De Gendt,et al. Polarity effect on the temperature dependence of leakage current through HfO2/SiO2 gate dielectric stacks , 2002 .
[14] Tan Fu Lei,et al. A physical model for the hysteresis phenomenon of the ultrathin ZrO2 film , 2002 .
[15] K. Kukli,et al. Influence of growth temperature on properties of zirconium dioxide films grown by atomic layer deposition , 2002 .
[16] A. Stesmans,et al. Electrical and physical characterization of high-k dielectric layers , 2001, 2001 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers (Cat. No.01TH8517).
[17] Y. Mori,et al. Analysis of detrap current due to oxide traps to improve flash memory retention , 2000, 2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059).
[18] L. Pantisano,et al. Towards understanding degradation and breakdown of SiO2/high-k stacks , 2002, Digest. International Electron Devices Meeting,.
[19] D. J. Dumin,et al. Correlation of stress-induced leakage current in thin oxides with trap generation inside the oxides , 1993 .
[20] H. Reisinger,et al. A comparative study of dielectric relaxation losses in alternative dielectrics , 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).