论文信息 - Photosensitivity of Ge-doped silica deposited by hollow cathode PECVD

Photosensitivity of Ge-doped silica deposited by hollow cathode PECVD

It is demonstrated that a novel thin film growth technique, hollow cathode PECVD, previously used to produce low-loss glass waveguides, can also produce intrinsically (no hydrogen loading) very photosensitive (to UV) germanosilicate waveguide material. In addition, the sign of the photosensitivity can be altered by varying the growth conditions.

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