Anisotropic-etching process simulation system MICROCAD analyzing complete 3D etching profiles of single crystal silicon

We have developed an anisotropic-chemical-etching process simulation system, MICRO-CAD, which is equipped with a database of orientation dependent etching rates of single crystal silicon. When crystallographic orientation of the wafer, mask pattern, etching media and etching conditions such as its concentration and temperature are given, it calculates 3D etching profiles according to the etching time increments.

[1]  Carlo H. Séquin Computer simulation of anisotropic crystal etching , 1991 .

[2]  A. Koide,et al.  Simulation of three-dimensional etch profile of silicon during orientation dependent anisotropic etching , 1991, Proceedings IEEE The Tenth Annual International Workshop on Micro Electro Mechanical Systems. An Investigation of Micro Structures, Sensors, Actuators, Machines and Robots.

[3]  Willy Sansen,et al.  Compensation structures for convex corner micromachining in silicon , 1990 .

[4]  F. C. Frank,et al.  Orientation‐Dependent Dissolution of Germanium , 1960 .

[5]  G. Delapierre Micro-machining: A survey of the most commonly used processes , 1989 .

[6]  N. D. de Rooij,et al.  CAD for silicon anisotropic etching , 1990, IEEE Proceedings on Micro Electro Mechanical Systems, An Investigation of Micro Structures, Sensors, Actuators, Machines and Robots..

[7]  D. Shaw,et al.  Morphology analysis in localized crystal growth and dissolution , 1979 .

[8]  R. J. Jaccodine,et al.  Use of Modified Free Energy Theorems to Predict Equilibrium Growing and Etching Shapes , 1962 .

[9]  D. B. Lee Anisotropic Etching of Silicon , 1969 .