论文信息 - High accuracy temperature bipolar modeling for demanding Bandgap application

High accuracy temperature bipolar modeling for demanding Bandgap application

VDD reduction in advanced CMOS IC's push for reduced temperature stability spread of bipolar based BGR. To achieve this goal, a reliable extraction methodology for IC temperature coefficient is detailed. Based on corner lot measurements, a worst-case bipolar model is built. Bandgap circuit measurements are finally compared to statistical simulations.

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